JOPSS - Search Results

Search Results: Records 1-5 displayed on this page of 5

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Journal Articles

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

Sugai, Hiroyuki; Matsunami, Noriaki*; Fukuoka, Osamu*; Sataka, Masao; Kato, Teruo; Okayasu, Satoru; Shimura, Tetsuo*; Tazawa, Masato*

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.291 - 294, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.126

Times Cited Count：15 Percentile：70.41(Instruments & Instrumentation)

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO $_{2}$ glass substrate were prepared by a RF-sputter-deposition method at 400 $^{circ}$ C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. We find that the conductivity monotonically increases from 1.510 $^{2}$ to 810 $^{2}$ S/cm with increasing the fluence up to 410 $^{13}$ /cm $^{2}$ , as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310 $^{16}$ /cm $^{2}$ (7 dpa). The dpa of 100 MeV Xe at 410 $^{13}$ /cm $^{2}$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Journal Articles

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.146

Times Cited Count：24 Percentile：82.92(Instruments & Instrumentation)

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO $_{2}$ glass substrate were prepared by a RF-sputter-deposition method at 400 $^{circ}$ C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.510 $^{2}$ to 810 $^{2}$ S/cm with increasing the fluence up to 410 $^{13}$ /cm $^{2}$ , as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310 $^{16}$ /cm $^{2}$ (7 dpa). The dpa of 100 MeV Xe at 410 $^{13}$ /cm $^{2}$ is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.